View IKW15N120T2_8647704.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 1 rev. 2 . 2 12.06.2013 low loss duopack : igbt in 2 nd generation trenchstop ? technology with soft, f ast recovery anti - parallel emitter controlled d iode ? C ? ? ? trenchstop ? 2 nd ge neration for 1200 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior ? ce(sat) ? ? ? ? 1 for target applications ? ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking code package ikw 1 5n120t2 1200v 1 5 a 1.7 5 v 1 75 ? c k 1 5 t120 2 pg - to - 247 - 3 maximum ratings parameter symbol value unit collector - emitter voltage v ce 1200 v dc collector curre nt ( tj = 150c ) t c = 25 ? c t c = 1 1 0 ? c i c 30 15 a pulsed collector current, t p limited by t jmax i c p u l s 60 turn off safe operating area v ce ? 1200v, t j ? 1 75 ? c - 60 diode forward current ( tj = 150c ) t c = 25 ? c t c = 110 ? c i f 25 15 diode pulsed curr ent, t p limited by t jmax i f p u l s 60 gate - emitter voltage v ge ? 20 v short circuit withstand time 2 ) v ge = 15v, v cc ? 6 00v, t j , start ? 1 75 ? c t sc 10 ? s power dissipation t c = 25 ? c p t o t 2 35 w operating junction temperature t j - 40...+1 75 ? c storage temp erature t s t g - 55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s wavesoldering only, temperature on leads only - 260 1 j - std - 020 and jesd - 022 2 ) allowed number of short circuits: <1000; time between short circuits: >1s. pg - to - 247 - 3 g c e
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 2 rev. 2 . 2 12.06.2013 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction C case r t h j c 0. 63 k/w diode thermal resistance, junction C case r t h j c d 1.12 thermal resistance, junction C ambient r t h j a 40 electrical characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value un it min. typ. max. static characteristic collector - emitter breakdown voltage v ( b r ) c e s v ge = 0v , i c = 5 00 a 1200 - - v collector - emitter saturation voltage v c e ( s a t ) v ge = 15 v , i c = 15 a t j =2 5 ? c t j =1 50 ? c t j =1 75 ? c - - - 1. 7 2.1 2. 2 2. 2 - - diode forward voltage v f v ge = 0v , i f = 15 a t j =2 5 ? c t j =1 50 ? c t j =1 75 ? c - - - 1.75 1. 8 1.75 2. 2 - - gate - emitter threshold voltage v g e ( t h ) i c = 0 . 6 m a, v ce = v ge 5. 2 5.8 6. 4 zero gate voltage collector current i c e s v ce = 12 0 0v , v ge = 0v t j =2 5 ? c t j =1 5 0 ? c t j =1 75 ? c - - - - - - 0.4 4.0 20 ma gate - emitter leakage current i g e s v ce = 0v , v ge =2 0 v - - 600 na transconductance g fs v ce = 20 v , i c = 15 a - 8 - s
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 3 rev. 2 . 2 12.06.2013 dynamic characteristic input capacitance c i s s v ce = 25 v , v ge = 0v , f = 1 mh z - 10 00 - pf output capacitance c o s s - 1 0 0 - revers e transfer capacitance c r s s - 56 - gate charge q g a t e v cc = 96 0 v, i c = 15 a v ge = 15 v - 9 3 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1 ) i c ( s c ) v ge = 15 v , t sc ? 10 ? s v c c = 6 0 0 v, t j , s t a r t = 25 ? c t j , s t a r t = 1 7 5 ? c - 82 60 - a switching characteristic, inductive load, at t j =25 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn - on delay time t d ( o n ) t j =2 5 ? c, v cc = 60 0 v, i c = 15 a, v ge = 0/ 15 v , r g = 41 . 8 ? , l ? 2) =1 26 n h, c ? 2) = 34 pf energy losses include tail and diode reverse recovery. - 32 - ns rise time t r - 25 - turn - off delay time t d ( o f f ) - 362 - fall time t f - 95 - turn - on energy e on - 1.25 - mj turn - off energy e o f f - 0.8 - total switching energy e ts - 2.05 - anti - parallel diode characteristic diode reverse recovery time t rr t j =2 5 ? c, v r = 6 00 v , i f = 15 a, di f /dt = 45 0 a/ ? s - 300 - ns diode reverse recovery charge q rr - 1.3 c diode peak reverse recovery current i r r m - 10 a diode peak rate of fal l of reverse recovery current during t b di rr /d t - 215 - a/ ? s 1 ) allowed number of short circuits: <1000; time between short circuits: >1s. 2) leakage inductance l ? a nd stray capacity c ? due to dynamic test circu it in figure e.
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 4 rev. 2 . 2 12.06.2013 switching characteristic, inductive load, at t j =1 75 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn - on delay time t d ( o n ) t j =1 75 ? c v cc = 60 0 v, i c = 15 a, v g e = 0/ 15 v , r g = 4 1. 8 ? , l ? 1) = 315 n h, c ? 1) =3 4 pf energy losses include tail and diode reverse recovery. - 31 - ns rise time t r - 30 - turn - off delay time t d ( o f f ) - 450 - fall time t f - 176 - turn - on energy e on - 1.5 - mj turn - off energy e o f f - 1.3 - total switching energy e ts - 2.8 - anti - parallel diode characteristic diode reverse recovery time t rr t j =1 75 ? c v r = 6 00 v , i f = 15 a, di f /dt = 46 0 a/ ? s - 4 6 0 - ns diode reverse recovery charge q rr - 2.65 - c diode peak reverse recovery current i r r m - 13 - a diode peak rate of fall of reverse recovery current during t b di rr /d t - 123 a/ ? s 1) leakage inductance l ? a nd stray capacity c ? due to dynamic test circuit in figure e.
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 5 rev. 2 . 2 12.06.2013 i c , collector current i c , collector current f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j ? 1 75 ? c, d = 0.5, v ce = 600v, v ge = 0/+15v, r g = 41.8 ? ) figure 2. safe operating area ( d = 0, t c = 25 ? c, t j ? 1 75 ? c; v ge =15v) p tot , power dissipation i c , collector current t c , case temperature t c , case temperature figure 3. maximum p ower dissipation as a function of case temperature ( t j ? 1 75 ? c) figure 4. maximum dc collector current as a function of case temperatur e ( v ge ? 15v, t j ? 1 75 ? c) 10hz 100hz 1khz 10khz 100khz 0a 20a 40a 60a t c =110c t c =80c 1v 10v 100v 1000v 0.1a 1a 10a dc 10s t p =3s 50s 500s 20ms 150s 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 25c 75c 125c 0a 10a 20a 30a i c i c
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 6 rev. 2 . 2 12.06.2013 i c , collector current i c , collector current v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 1 75 c) i c , collector current v ce(sat), collector - emitt saturation vol tage v ge , gate - emitter voltage t j , junction temperature figure 7. typic al transfer characteristic (v ce =20v) figure 8. typical collector - emitter saturation voltage as a function of junction temperature ( v ge = 15v) 0v 1v 2v 3v 4v 0a 10a 20a 30a 40a 50a 60a 20v 15v 7v 9v 11v 13v v ge =17v 0v 1v 2v 3v 4v 0a 10a 20a 30a 40a 50a 60a 20v 15v 7v 9v 11v 13v v ge =17v 0v 2v 4v 6v 8v 10v 12v 0a 10a 20a 30a 40a 50a 60a 25c t j =175c 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v 3.0v i c =15a i c =30a i c =7.5a i c =2a
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 7 rev. 2 . 2 12.06.2013 t, switching times t, switching times i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =1 75 c, v ce =600v, v ge =0/15v, r g = 41.8 ?, figure 10. typical switching times as a function of gate resistor (inductive load, t j =1 75 c, v ce =600v, v ge =0/15v, i c = 15 a, dynamic test circuit in figure e) t, switching times v ge(th ) , gate - emitt trshold voltag e t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c = 15 a, r g = 41.8 ?, figure 12. gate - emitter threshold voltage as a function of junction temperature ( i c = 600a ) 7.5a 15.0a 22.5a 10ns 100ns t r t d(on) t f t d(off) ??? ??? ??? ??? ??? ???? 10 ns 100 ns 1000 ns t f t r t d(off) t d(on) 0c 50c 100c 150c 10ns 100ns t r t f t d(on) t d(off) 0c 50c 100c 150c 3.5v 4.0v 4.5v 5.0v 5.5v 6.0v 6.5v min. typ. max.
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 8 rev. 2 . 2 12.06.2013 e , switching energy los ses e , switching energy los ses i c , collector curre nt r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j =1 75 c, v ce =600v, v ge =0/15v, r g = 41.8 ?, figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j =1 75 c, v ce =600v, v ge =0/15v, i c = 15 a, dynamic test circuit in figure e) e , switching energy los ses e , switching energy los ses t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c = 15 a, r g = 41.8 ?, figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j =1 75 c, v ge =0/15v, i c = 15 a, r g = 41.8 ?, 7.5a 15.0a 22.5a 0.0mj 2.5mj 5.0mj 7.5mj e ts * e off *) e on and e ts include losses due to diode recovery e on * ??? ??? ??? ??? ??? ???? 0.00 mj 1.25 mj 2.50 mj 3.75 mj 5.00 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off 0c 50c 100c 150c 0.0mj 1.2mj 2.4mj e ts * e on * *) e on and e ts include losses due to diode recovery e off 400v 500v 600v 700v 0.00mj 1.25mj 2.50mj 3.75mj 5.00mj e ts * e on * *) e on and e ts include losses due to diode recovery e off
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 9 rev. 2 . 2 12.06.2013 v ge , gate - emitter voltage c, capacitance q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 15 a) figure 18. typical capacitance as a function of collector - emitter voltage ( v ge =0v, f = 1 mhz) t sc , short circuit withst and time i c(sc) , short circuit collector current v ge , gate - emittetr voltage v ge , gate - emittetr voltage figure 19. short circuit withstand time as a function of gate - emi tter voltage ( v ce =600v , start at t j ? ) figure 20. typical short circuit collector current as a function of gate - emitter voltage ( v ce ? t j ,start = 1 75 ? 0nc 25nc 50nc 75nc 0v 5v 10v 15v 960v 240v 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss 12v 14v 16v 18v 0s 5s 10s 15s 12v 14v 16v 18v 0a 25a 50a 75a 100a
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 10 rev. 2 . 2 12.06.2013 v ce , collector - emitter voltage i c , collector current t , time t , time figure 21. typical turn on behavior (v ge =0/15v, r g = 41.8 ?, t j = 1 75 ? figure 22. typical turn off behavior (v ge =15/0v, r g = 41.8 ?, t j = 1 75 ? z thjc , transient thermal re sistance z thjc , transient the rmal resistance t p , pulse width t p , pulse width figure 23. igbt transient thermal resistance ( d = t p / t ) figure 24. diode transient thermal impedance as a function of pulse width ( d = t p / t ) r , ( k / w ) ? , ( s ) ? ? 0. 143 3.06 *10 - 4 0.217 3.47 *10 - 3 0.258 1.71 *10 - 2 0.017 2.63 *10 - 1 r , ( k / w ) ? , ( s ) ? ? 0.2 91 2.75 *10 - 4 0.434 2.60 *10 - 3 0.363 1.48 *10 - 2 0.028 1.78 *10 - 1 0v 200v 400v 600v 0a 5a 10a 15a 20a 25a 1.2us 0.8us 0.4us 0us i c v ce 0v 200v 400v 600v 0a 5a 10a 15a 1.2us 0.8us 0.4us 0us i c v ce 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 11 rev. 2 . 2 12.06.2013 t rr , reverse recovery tim e q rr , reverse recovery cha rge di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery time as a function of diode current slope ( v r =600v, i f = 15 a, dynamic test cir cuit in figure e) figure 24. typical reverse recovery charge as a function of diode current slope ( v r =600v, i f = 15 a, dynamic test circuit in figure e) i rr , reverse recovery cur rent di rr /dt , diode peak rate of f all of reverse recovery current di f /dt , diode current slope di f /dt , diode current slope figure 25. typical reverse recovery current as a function of diode current slope ( v r =600v, i f = 15 a, dynamic test circuit in figure e) figur e 26. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =600v, i f = 15 a, dynamic test circuit in figure e) 400a/s 800a/s 1200a/s 0ns 100ns 200ns 300ns 400ns 500ns 600ns t j =25c t j =175c 400a/s 800a/s 1200a/s 0c 1c 2c 3c t j =25c t j =175c 400a/s 800a/s 1200a/s 0a 5a 10a 15a 20a t j =25c t j =175c 400a/s 800a/s 1200a/s -0a/s -100a/s -200a/s -300a/s -400a/s -500a/s -600a/s t j =25c t j =175c
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 12 rev. 2 . 2 12.06.2013 i f , forward current v f , forward voltage v f , forward voltage t j , junction temperature figure 27. typical diode forward current as a function of forward voltage figure 28. typical diode forward voltage as a function of junction temperature 0v 1v 2v 0a 10a 20a 30a 40a 50a 60a 175c t j =25c 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 15a 7.5a i f =30a 2a
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 13 rev. 2 . 2 12.06.2013
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 14 rev. 2 . 2 12.06.2013 figure c. def inition of diodes switching characteristics figure d. thermal equivalent circuit figure e. dynamic test circuit figure a. definition of switching times figure b. definition of switching losses i r r m 90% i r r m 10% i r r m di /dt f t r r i f i,v t q s q f t s t f v r di /dt r r q =q q r r s f + t =t t r r s f + p ( t ) 1 2 n t ( t ) j ? 1 1 ? 2 2 n n ? t c r r r r r r
ikw 1 5n 120 t2 trenchstop ? 2 nd generation series ifag ipc td vls 15 rev. 2 . 2 12.06.2013 published by infineon technolog ies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infr ingement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, pleas e contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express writ ten approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or syst em. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

▲Up To Search▲

Price & Availability of IKW15N120T2

	To Download IKW15N120T2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .